| 1. | Detail specification for electronic components . case rated bipolar transistor for silicon npn high - frequency amplification for type 3da1162
电子元器件详细规范. 3da1162型硅npn高频放大管壳额定的双极型晶体管 |
| 2. | Detail specification for electronic components . case rated bipolar transistor for silicon npn high - frequency amplification for type 3da1722
电子元器件详细规范. 3da1722型硅npn高频放大管壳额定的双极型晶体管 |
| 3. | Detail specification for electronic components . case rated bipolar transistor for silicon npn high - frequency amplification for type 3da 2688
电子元器件详细规范. 3da2688型硅npn高频放大管壳额定的双极型晶体管 |
| 4. | Semiconductor devices ; discrete devices ; part 7 : bipolar transistors ; section 4 : blank detail specification for case - rated bipolar transistors for high - frequency amplification
半导体器件.分立器件.第7部分:双极晶体管.第4节:高频放大双极晶体管的空白详细规范 |
| 5. | Semiconductor devices - discrete devices . part 7 : bipolar transistors . section four - blank detail specification for case - rated bipolar transistors for high - frequency amplification
半导体器件分立器件第7部分:双极型晶体管第四篇高频放大管壳额定双极型晶体管空白详细规范 |
| 6. | Semiconductor devices ; discrete devices ; part 7 : bipolar transistors ; section one : blank detail specification for ambient - rated bipolar transistors for low and high - frequency amplification
半导体器件.分立器件.第7部分:双极性晶体管.第1节:低频和高频放大用的额定环境晶体管的空白详细规范 |
| 7. | Specification for harmonized system of quality assessment for electronic components - semiconductor discrete devices - blank detail specification - case - rated bipolar transistors for high - frequency amplifications
电子元器件质量评估协调体系.半导体分立器件.空白详细规范.高频放大用外壳温度额定双极晶体管 |
| 8. | Specification for harmonized system of quality assessment for electronic components - semiconductor discrete devices - blank detail specification - ambient - rated bipolar transistors for low and high - frequency amplification
电子元器件质量评估的协调体系.半导体分立器件.空白详细规范.低频和高频放大用环境温度额定双极晶体管 |
